Datasheet > MBRF20H100CT

MBRF20H100CT

更新时间： 2024-11-18 04:41:03

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描述
Isolated 20.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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数据手册

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MBRF20H100CT 数据手册

MBRF20H100CT – MBRF20H200CT

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

RoHS

COMPLIANCE

ITO-220AB

Features

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

260^oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

Dimensions in inches and (millimeters)

Cases: ITO-220AB molded plastic

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBRF

20H100CT

100

MBRF

20H150CT

150

MBRF

20H200CT

200

Type Number

Symbol

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

105

150

140

200

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current at T_C=133^oC

I_(AV)

I_FRM

I_FSM

I_RRM

Peak Repetitive Forward Current (Rated V_R,

Square Wave, 20KHz) at Tc=133^oC

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

150

Peak Repetitive Reverse Surge Current

(Note 1)

1.0

0.5

Maximum Instantaneous Forward Voltage at

(Note 2)

I = 10A, Tc=25^oC

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

I = 10A, Tc=125^oC

V_F

I =20A, Tc=25^oC

I =20A, Tc=125^oC

Maximum Instantaneous Reverse Current

at Rated DC Blocking Voltage @Tc=25 ^oC

@ Tc=125 ^oC

5.0

2.0

I_R

Voltage Rate of Change, (Rated V_R)

10,000

V/uS

dV/dt

RMS Isolation Voltage (t=1.0 second, R.H.

≦30%, T_A=25 ^oC)

(Note 4)

(Note 5)

(Note 6)

4500

3500

1500

V_ISO

^oC/W

Typical Thermal Resistance Per Leg (Note3)

3.5

θJC

T_J

^oC

Operating Junction Temperature Range

Storage Temperature Range

-65 to +175

^oC

TSTG

Notes:

1. 2.0 us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg.

4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.

5. Clip mounting (on case), where leads do overlap heatsink.

6. Screw mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)

Version: A07

中文翻译

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与MBRF20H100CT相关器件

型号	品牌	获取价格	描述	数据表
MBRF20H100CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, PLASTI
MBRF20H100CT_09	TSC	获取价格	Isolated 20.0 AMPS. Schottky Barrier Rectifiers
MBRF20H100CT_11	TSC	获取价格	10.0AMPS Isolated Schottky Barrier Rectifiers
MBRF20H100CT_13	TSC	获取价格	20.0AMPS Isolated Schottky Barrier Rectifiers
MBRF20H100CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF20H100CTG	KERSEMI	获取价格	SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
MBRF20H100CTG	ONSEMI	获取价格	SWITCHMODE Power Rectifier 100 V, 20 A
MBRF20H100CTG	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, PLASTIC, ITO-220
MBRF20H100CTG/45	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 100V V(RRM),
MBRF20H100CTG-E3	VISHAY	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

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