Datasheet > MBRF20H200CTE3

MBRF20H200CTE3

更新时间： 2024-11-21 14:43:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	378K
描述
DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MBRF20H200CTE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TO-220AB
包装说明：	LEAD FREE, PLASTIC, ITO-220AB, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.7
Is Samacsys：	N	Base Number Matches：	1

MBRF20H200CTE3 数据手册

MBR20H200CT, MBRF20H200CT & SB20H200CT-1

Vishay Semiconductors

Dual Common-Cathode High-Voltage Schottky Rectifier

Low Leakage Current 5.0 µA

TO-220AB

ITO-220AB

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

V_F

2 x 10 A

200 V

290 A

MBRF20H200CT

MBR20H200CT

0.75 V

175 °C

TO-262AA

T_j

Features

• Guarding for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

SB20H200CT-1

PIN 1

PIN 2

CASE

PIN 3

• High frequency operation

• Solder Dip 260 °C, 40 seconds

Mechanical Data

Typical Applications

Case: TO-220AB, ITO-220AB, TO-262AA

Epoxy meets UL-94V-0 Flammability rating

For use in high frequency inverters, free wheeling and

polarity protection applications

Terminals: Matte Tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

Maximum Ratings

(T_C= 25 °C, unless otherwise noted)

Parameter

Symbol

V_RRM

V_RWM

V_DC

MBR20H200CT

Unit

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

200

Maximum average forward rectified current

Total device

Per leg

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per leg

Peak repetitive reverse current per leg at t_p= 2 µs, 1 KHz

I_FSM

290

I_RRM

E_RSM

E_AS

1.0

Peak non-repetitive reverse surge energy per leg (8/20 µs waveform)

Non-repetitive avalanche energy per leg at 25 °C, I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

Human body model air discharge: C = 100 pF, R 0 1.5 kΩ

Voltage rate of change (rated V_R)

V_C

dv/dt

T_J, T_STG

V_AC

10000

- 65 to + 175

1500

V/µs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only)

From terminals to heatsink t = 1 minute

Document Number 88786

26-Aug-05

www.vishay.com

12 3 4

中文翻译

下载PDF

与MBRF20H200CTE3相关器件

型号	品牌	获取价格	描述	数据表
MBRF20H200CT-E3	VISHAY	获取价格	DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC, ITO-220AB, 3 PI
MBRF20H200CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF20H35CT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBRF20H35CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-220AB, PLASTIC
MBRF20H35CT/45-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier
MBRF20H35CTHE3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,
MBRF20H45CT	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBRF20H45CT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBRF20H45CTHE3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBRF20H45CT-HE3/45	VISHAY	获取价格	DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,

与MBRF20H200CTE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20H200CTE3

MBRF20H200CTE3 技术参数

MBRF20H200CTE3 数据手册

与MBRF20H200CTE3相关器件

与MBRF20H200CTE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBRF20H200CTE3

MBRF20H200CTE3 技术参数

MBRF20H200CTE3 数据手册

与MBRF20H200CTE3相关器件

与MBRF20H200CTE3相关文章

您还可以找

您在本页遇到什么问题？