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MBRF20H100CTHE3/45 PDF预览

MBRF20H100CTHE3/45

更新时间： 2024-11-18 12:10:19
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 507K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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MBRF20H100CTHE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.48
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS, HIGH RELIABILITY应用：EFFICIENCY
外壳连接：ISOLATED配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.64 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：250 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：100 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

MBRF20H100CTHE3/45 数据手册

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MBR(F,B)20H90CT & MBR(F,B)20H100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR20H90CT  
MBR20H100CT  
1
MBRF20H90CT  
MBRF20H100CT  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
MBRB20H90CT  
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB20H100CT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
IR  
10 A x 2  
90 V, 100 V  
250 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
4.5 µA  
VF  
0.64 V  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MBR20H90CT  
MBR20H100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
total device  
per diode  
20  
10  
Maximum average forward rectified current  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
250  
1.0  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88673  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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MBRF20H100CTHE3/45 替代型号

型号 品牌 替代类型 描述 数据表
MBRF20H90CT-E3/45 VISHAY

完全替代

 DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,
MBRF20H100CT-E3/45 VISHAY

类似代替

 Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF20H100CT VISHAY

功能相似

 Dual High-Voltage Schottky Rectifiers

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