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MBRF2090CT-M3/4W PDF预览

MBRF2090CT-M3/4W

更新时间: 2024-11-21 14:53:11
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
4页 89K
描述
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

MBRF2090CT-M3/4W 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBRF2090CT-M3/4W 数据手册

 浏览型号MBRF2090CT-M3/4W的Datasheet PDF文件第2页浏览型号MBRF2090CT-M3/4W的Datasheet PDF文件第3页浏览型号MBRF2090CT-M3/4W的Datasheet PDF文件第4页 
MBRF2090CT, MBRF20100CT  
www.vishay.com  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
TMBS®  
ITO-220AB  
• Trench MOS Schottky technology  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106  
3
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
MBRF2090CT  
MBRF20100CT  
PIN 1  
PIN 2  
TYPICAL APPLICATIONS  
PIN 3  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters or polarity  
protection application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2 x 10 A  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
90 V, 100 V  
150 A  
IFSM  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
commercial grade  
VF at IF = 10 A  
TJ max.  
Package  
0.65 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
150 °C  
ITO-220AB  
Diode variation  
Dual common cathode  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRF2090CT  
MBRF20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
total device  
per diode  
20  
10  
Maximum average forward rectified current  
IF(AV)  
A
A
at TC = 133 °C  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
Voltage rating of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
Isolation voltage from terminal to heatsink t = 1 min  
-65 to +150  
1500  
V
Revision: 17-Aug-15  
Document Number: 89319  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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