Datasheet > MBRF120100

MBRF120100

更新时间： 2024-09-16 01:05:11

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	472K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRF120100 数据手册

MBRF12045 thru MBRF120100R

V_RRM= 45 V - 100 V

I_F(AV)= 120 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V_RRM

TO-244AB Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRF12080(R) MBRF120100(R)

Parameter

Symbol

MBRF12045(R) MBRF12060(R)

Unit

Repetitive peak reverse

voltage

V_RRM

100

V_RMS

V_DC

T_j

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

100

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRF12080(R) MBRF120100(R)

Parameter

Symbol

I_F(AV)

MBRF12045(R) MBRF12060(R)

Unit

Average forward current

(per pkg)

120

800

120

800

120

800

120

800

Peak forward surge current

(per leg)

I_FSM

t_p= 8.3 ms, half sine

Maximum forward voltage

(per leg)

V_F

I_R

_FM= 60 A, T_j= 25 °C

0.84

0.70

0.75

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Reverse current at rated DC

blocking voltage (per leg)

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R_ΘJC

0.80

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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中文翻译

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与MBRF120100相关器件

型号	品牌	获取价格	描述	数据表
MBRF120100R	GENESIC	获取价格	High Surge Capability
MBRF120100R	AMERICASEMI	获取价格	Silicon Power Schottky Diode
MBRF120150	GENESIC	获取价格	High Surge Capability
MBRF12020	GENESIC	获取价格	High Surge Capability
MBRF12020	AMERICASEMI	获取价格	Silicon Power Schottky Diode
MBRF120200R	GENESIC	获取价格	High Surge Capability
MBRF12030R	AMERICASEMI	获取价格	Silicon Power Schottky Diode
MBRF12040R	AMERICASEMI	获取价格	Silicon Power Schottky Diode
MBRF12040R	GENESIC	获取价格	High Surge Capability
MBRF12045	GENESIC	获取价格	Silicon Power Schottky Diode