Datasheet > MBRF12080

MBRF12080

更新时间： 2024-11-21 01:05:11

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	472K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRF12080 数据手册

MBRF12045 thru MBRF120100R

V_RRM= 45 V - 100 V

I_F(AV)= 120 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V_RRM

TO-244AB Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRF12080(R) MBRF120100(R)

Parameter

Symbol

MBRF12045(R) MBRF12060(R)

Unit

Repetitive peak reverse

voltage

V_RRM

100

V_RMS

V_DC

T_j

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

100

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRF12080(R) MBRF120100(R)

Parameter

Symbol

I_F(AV)

MBRF12045(R) MBRF12060(R)

Unit

Average forward current

(per pkg)

120

800

120

800

120

800

120

800

Peak forward surge current

(per leg)

I_FSM

t_p= 8.3 ms, half sine

Maximum forward voltage

(per leg)

V_F

I_R

_FM= 60 A, T_j= 25 °C

0.84

0.70

0.75

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Reverse current at rated DC

blocking voltage (per leg)

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R_ΘJC

0.80

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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中文翻译

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