Datasheet > MBRF1045CT

MBRF1045CT

更新时间： 2024-11-21 12:10:19

品牌	Logo	应用领域
科盛美 - KERSEMI		二极管局域网
页数	文件大小	规格书
2页	894K
描述
Plastic material used carries Underwriters Laboratory Classifications 94V-0

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MBRF1045CT 数据手册

MBRF1035CT - MBRF10150CT

ITO-220AB

Features

ꢀ

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

ꢀ

High temperature soldering guaranteed:

260^oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

ꢀ

Cases: ITO-220AB molded plastic

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

ꢀ

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBRF MBRF MBRF MBRF MBRF MBRF MBRF

1035 1045 1050 1060 1090 10100 10150

Symbol

Units

Type Number

100

150

105

150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at T_C=133^oC

V_RRM

V_RMS

V_DC

100

I_(AV)

Peak Repetitive Forward Current (Rated V_R,

Square Wave, 20KHz) at Tc=133^oC

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Peak Repetitive Reverse Surge Current

(Note 1)

I_FRM

10.0

I_FSM

I_RRM

120

0.5

Maximum Instantaneous Forward Voltage at

(Note 2)

I = 5A, Tc=25^oC

0.70

0.57

0.80

0.67

0.80

0.85

0.75

0.95

0.85

0.88

0.78

0.98

0.88

I = 5A, Tc=125^oC

V_F

0.65

0.90

0.75

I =10A, Tc=25^oC

I =10A, Tc=125^oC

Maximum Instantaneous Reverse Current

at Rated DC Blocking Voltage @Tc=25 ^oC

@ Tc=125 ^oC

0.1

I_R

0.1

5.0

Voltage Rate of Change, (Rated V_R)

RMS Isolation Voltage (t=1.0 second, R.H.

dV/dt

10,000

V/uS

≦30%, T_A=25 ^oC)

(Note 4)

(Note 5)

(Note 6)

4500

3500

1500

V_ISO

Typical Thermal Resistance Per Leg (Note3)

Operating Junction Temperature Range

Storage Temperature Range

3.5

-65 to +150

^oC/W

^oC

θJC

T_J

STG

^oC

1. 2.0 us Pulse Width, f=1.0 KHz

3. Thermal Resistance from Junction to Case Per Leg.

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

Notes:

4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.

5. Clip mounting (on case), where leads do overlap heatsink.

6. Screw mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)

www.kersemi.com

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与MBRF1045CT相关器件

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MBRF1045CT_08	KEC	获取价格	SCHOTTKY BARRIER TYPE DIODE
MBRF1045CT-G	KERSEMI	获取价格	Voltage: 30 to 100 V Current: 10.0 A RoHS Device
MBRF1045CT-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
MBRF1045CT-JT	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-220AB, ALTERNAT
MBRF1045CTR	THINKISEMI	获取价格	10.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
MBRF1045CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBRF1045-E3/45	VISHAY	获取价格	Schottky Barrier Rectifier
MBRF1045-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
MBRF1045HE3/45	VISHAY	获取价格	Schottky Barrier Rectifier
MBRF1050	MCC	获取价格	10 Amp Schottky Barrier Rectifier 20 to 100 Volts

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