MBRF1045CTR thru MBRF10200CTR
Pb
MBRF1045CTR/MBRF1060CTR/MBRF10100CTR/MBRF10200CTR
Pb Free Plating Product
10.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
ITO-220AB
Unit : inch (mm)
Features
ꢀ
.189(4.8)
.165(4.2)
Standard MBR matured technology with high reliablity
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ Low reverse leakage current
ꢀ High surge current capability
Application
.130(3.3)
.114(2.9)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
ꢀ
ꢀ
ꢀ
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ Case: Fully Isolated Molding TO-220F Full Plastic Pak
ꢀ Epoxy: UL 94V-0 rate flame retardant
ꢀ Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ Polarity: As marked on diode body
ꢀ Mounting position: Any
ꢀ Weight: 2.0 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CT" Suffix "CTR"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
UNIT
MBRF1045CTR MBRF1060CTR MBRF10100CTR MBRF10200CTR
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
45
31
45
60
42
60
100
70
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
10
10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
120
A
A
Peak repetitive reverse surge current (Note 1)
1
0.5
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25°C
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
IF= 5 A, TJ=125°C
VF
V
IF= 10 A, TJ=25°C
IF= 10 A, TJ=125°C
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
0.1
IR
mA
15
10
2
5
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
3.5
dV/dt
RθJC
TJ
V/μs
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/