Datasheet > MBRF1050

MBRF1050

更新时间： 2024-09-21 12:21:07

品牌	Logo	应用领域
鲁光 - LGE		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	251K
描述
Schottky Barrier Rectifiers

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中文翻译

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数据手册

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MBRF1050 数据手册

MBRF1030-MBRF10100

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V

CURRENT: 10 A

ITO-220AC

Features

4.5± 0.2

+0.2

-0.1

10.2± 0.2

3.1

High surge capacity.

For use in low voltage, high frequency inverters, free

11 1wheeling, and polarity protection applications.

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

4.0± 0.3

1.4± 0.1

0.6± 0.1

2.6± 0.2

Mechanical Data

Case:JEDEC ITO-220AC,molded plastic body

0.6± 0.1

5.0± 0.1

Polarity: As marked

Position: Any

Dimensions in millimeters

Weight: 0.056 ounces,1.587 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

1030 1035 1040 1045 1050 1060 1090 10100

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC blocking voltage

100

Maximum average forw ard total device

I_F(AV)

I_FSM

m rectified current @T_C= 133°C

Peak forw ard surge current 8.3ms single half

150

sine-w ave superimposed on rated load

Maximum forw ard

voltage

(I_F=10A,T_C=25

(I_F=10A,T_C=125

(I _F=20A,T_C=25

(I_F=20A,T_C=125

)

0.80

)

0.57

0.84

0.72

0.70

0.95

0.65

0.95

V_F

(Note 1)

)

0.85

0.75

Maximum reverse current

@T_C=25

0.1

I_R

m A

at rated DC blocking voltage

@T_C=125

6.0³⁾

Maximum thermal resistance (Note2)

Operating junction temperature range

Storage temperature range

R_θJC

T_J

4.0

- 55 ---- + 150

- 55 ---- + 175

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance from junction to case.

3.T_C=100

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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