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MBRF10100CT-G PDF预览

MBRF10100CT-G

更新时间: 2024-01-21 22:56:37
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管测试瞄准线功效局域网
页数 文件大小 规格书
3页 1169K
描述
Voltage: 30 to 100 V Current: 10.0 A RoHS Device

MBRF10100CT-G 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ITO-220AC, 3/2 PINReach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
其他特性:LOW POWER LOSS, FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:100 µA
反向测试电压:100 V表面贴装:NO
技术:SCHOTTKY端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBRF10100CT-G 数据手册

 浏览型号MBRF10100CT-G的Datasheet PDF文件第2页浏览型号MBRF10100CT-G的Datasheet PDF文件第3页 
MBRF1030CT-G Thru. MBRF10100CT-G  
Voltage: 30 to 100 V  
Current: 10.0 A  
RoHS Device  
Features  
ITO-220AB  
-Metal of silicon rectifier, majority carrier conduction.  
0.189(4.80)  
0.173(4.40)  
0.118(3.00)  
0.102(2.60)  
0.118(3.00)  
0.138(3.50)  
0.122(3.10)  
0.406(10.30)  
0.386( 9.80)  
0.102(2.60)  
-Guard ring for transient protection.  
-Low power loss, high efficiency.  
-High current capability.  
-High surge capacity.  
0.622(15.80)  
0.583(14.80)  
-For use in low voltage, high frequency inverters,  
free wheeling,and polarity protection applications.  
0.157(4.00)  
0.118(3.00)  
Mechanical Data  
0.071  
MAX  
(1.80)  
0.059(1.50)  
0.043(1.10)  
0.551(14.00)  
0.511(13.00)  
-Case: ITO-220AB, molded plastic  
-Epoxy: UL 94-V0 rate flame retardant.  
-Polarity: As marked on the body.  
-Mounting position: Any  
0.031(0.80)  
0.020(0.50)  
0.028(0.70)  
0.020(0.50)  
0.105(2.67)  
0.095(2.41)  
0.114(2.90)  
0.098(2.50)  
-Weight: 2.24 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
MBRF  
MBRF  
MBRF  
MBRF  
MBRF  
MBRF  
MBRF  
Symbol  
Parameter  
Unit  
1030CT-G 1040CT-G 1045CT-G 1050CT-G 1060CT-G 1080CT-G 10100CT-G  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
30  
21  
30  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
V
Maximum RMS Voltage  
V
DC  
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current ( See Fig.1 )  
I
(AV)  
10  
A
A
Peak Forward Surage Current ,  
IFSM  
8.3ms Single Half Sine-Wave  
120  
Super Imposed On Rated Load(JEDEC Method)  
IF=5A@ TJ= 25°C  
0.70  
0.57  
0.80  
0.70  
0.80  
0.65  
0.90  
0.75  
0.85  
0.75  
0.95  
0.85  
IF=5A@ TJ=125°C  
IF=10A@ TJ= 25°C  
IF=10A@ TJ=125°C  
@ TJ= 25°C  
Peak Forward Voltage  
(Note 1)  
V
F
V
0.1  
15  
Maximum DC Reverse Current  
at Rate DC Blocking Voltage  
mA  
IR  
@ TJ= 125°C  
Typical Junction Capacitance (Note2)  
Typical Thermal Resistance (Note3)  
Operating Temperature Range  
Storage Temperature Range  
pF  
°C/W  
°C  
C
J
170  
220  
300  
3.0  
R
θJC  
3.0  
TJ  
-55 to +150  
-55 to +175  
TSTG  
°C  
NOTES:  
1. 300us pulse width,2% duty cycle.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance junction to case.  
www.kersemi.com  

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