Datasheet > MBRD5H100T4G_0712

MBRD5H100T4G_0712

更新时间： 2024-11-08 03:28:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
5页	77K
描述
SWITCHMODE Schottky Power Rectifier

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MBRD5H100T4G_0712 数据手册

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MBRD5H100T4G

SWITCHMODEt

Schottky Power Rectifier

Surface Mount Power Package

This series of Power Rectifiers employs the Schottky Barrier

principle in a large metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for use in low voltage, high

frequency switching power supplies, free wheeling diodes, and

polarity protection diodes.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

5 AMPERES, 100 VOLTS

Features

•ꢀGuardring for Stress Protection

•ꢀLow Forward Voltage

•ꢀ175°C Operating Junction Temperature

•ꢀEpoxy Meets UL 94 V-0 @ 0.125 in

•ꢀShort Heat Sink Tab Manufactured - Not Sheared!

•ꢀThis is a Pb-Free Device

(Pin 1: No Connect)

Mechanical Characteristics:

•ꢀCase: Epoxy, Molded, Epoxy Meets UL 94 V-0

•ꢀWeight: 0.4 grams (approximately)

•ꢀFinish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

MARKING

DIAGRAM

•ꢀLead and Mounting Surface Temperature for Soldering Purposes:

YWW

5100G

260°C Max. for 10 Seconds

DPAK

CASE 369C

•ꢀDevice Meets MSL1 Requirements

•ꢀESD Ratings: Machine Model, C (>400 V)

Human Body Model, 3B (>8000 V)

= Year

MAXIMUM RATINGS

B5100

= Work Week

= Device Code

= Pb-Free Package

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

Average Rectified Forward Current

(Rated V ) T = 171°C

F(AV)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Peak Repetitive Forward Current

(Rated V , Square Wave, 20 kHz)

FRM

= 171°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions

halfwave, single phase, 60 Hz)

105

FSM

Operating Junction and Storage

Temperature Range (Note 1)

T , T

-ꢁ65 to +175

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction-to-Ambient: dP /dT < 1/R .

December, 2007 - Rev. 2

Publication Order Number:

MBRD5H100/D

12 3 4 5

中文翻译

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