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MBRD5H100T4G_10

更新时间： 2024-09-21 11:11:31
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安森美 - ONSEMI 开关
页数 文件大小 规格书
5页 92K
描述
SWITCHMODE Schottky Power Rectifier

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MBRD5H100T4G_10 数据手册

 浏览型号MBRD5H100T4G_10的Datasheet PDF文件第2页浏览型号MBRD5H100T4G_10的Datasheet PDF文件第3页浏览型号MBRD5H100T4G_10的Datasheet PDF文件第4页浏览型号MBRD5H100T4G_10的Datasheet PDF文件第5页 
MBRD5H100T4G  
SWITCHMODE  
Schottky Power Rectifier  
Surface Mount Power Package  
This series of Power Rectifiers employs the Schottky Barrier  
principle in a large metal−to−silicon power diode. State−of−the−art  
geometry features epitaxial construction with oxide passivation and  
metal overlay contact. Ideally suited for use in low voltage, high  
frequency switching power supplies, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
5 AMPERES, 100 VOLTS  
Features  
• Guardring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Short Heat Sink Tab Manufactured − Not Sheared!  
• This is a Pb−Free Device  
1
4
3
(Pin 1: No Connect)  
Mechanical Characteristics:  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 0.4 grams (approximately)  
MARKING  
DIAGRAM  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
4
YWW  
DPAK  
CASE 369C  
B
2
1
• Device Meets MSL1 Requirements  
5100G  
3
• ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
Y
WW  
B5100  
G
= Year  
= Work Week  
= Device Code  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
= Pb−Free Package  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
100  
V
RRM  
RWM  
V
R
Average Rectified Forward Current  
I
5
A
A
F(AV)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
(Rated V ) T = 171°C  
R
C
Peak Repetitive Forward Current  
(Rated V , Square Wave, 20 kHz)  
I
10  
FRM  
R
T
= 171°C  
C
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
105  
A
FSM  
Operating Junction and Storage  
Temperature Range (Note 1)  
T , T  
−65 to +175  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 − Rev. 3  
MBRD5H100/D  
 
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