MBRD560
THRU
MBRD5200
Technical Data
Data Sheet N0801, Rev. A
MBRD560 THRU MBRD5200
SCHOTTKY RECTIFIER
Features
150℃ TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
“-A” is an AEC-Q101 qualified device
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DPAK
Circuit Diagram
Applications
Disk drives
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Battery charging
Maximum Ratings and Electrical characteristics @TA = 25°C unless otherwise specified
MBRD
560
MBRD
580
MBRD
5100
MBRD
5150
MBRD
5200
Characteristics
Symbol
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
80
100
150
200
V
Max. Average Forward Current
IF(AV)
IFSM
5
A
A
Max. Peak One Cycle Non-Repetitive Surge
Current(8.3ms Single half sine-wave)
120
VF
IR
0.65
0.75
300
0.85
1
0.90
0.92
V
Max. Forward Voltage Drop @5A, 25C
Max. Reverse Current @VRWM, 25C
Max. Junction Capacitance(Note1)
Max. Junction Temperature
mA
pF
CT
TJ
150
-55 to +150
-55 to +150
C
Max. Storage Temperature
Tstg
C
C/W
g
Typical Thermal Resistance Junction to Case
(DC operation)
6.0
RJC
wt
Approximate Weight
Case Style
0.39
DPAK
* Pulse width < 300 µs, duty cycle < 2%
Note1: Measured at 1.0 MHz and applied reverse voltage of 5.0V D.C.
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