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MBRD5200R PDF预览

MBRD5200R

更新时间: 2023-12-06 20:03:58
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
4页 207K
描述
肖特基整流管

MBRD5200R 数据手册

 浏览型号MBRD5200R的Datasheet PDF文件第2页浏览型号MBRD5200R的Datasheet PDF文件第3页浏览型号MBRD5200R的Datasheet PDF文件第4页 
MBRD560R THRU MBRD5200R-HAF  
Surface Mount Schottky Barrier Rectifiers  
Reverse Voltage - 60 to 200 V  
Forward Current - 5 A  
Features  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
TO-252 Plastic Package  
1. Anode 2. Cathode 3.Anode  
Maximum Ratings and Electrical Characteristics  
Ratings at 25ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load,  
for capacitive load current derate by 20%.  
Unit  
Symbols  
Marking  
MBRD560R MBRD580R MBRD5100R MBRD5150R MBRD5200R  
MBRD560R MBRD580R MBRD5100R MBRD5150R MBRD5200R  
Parameter  
-
Maximum Repetitive Peak Reverse Voltage  
Maximum DC Blocking Voltage  
VRRM  
VDC  
60  
60  
80  
80  
100  
100  
5
150  
150  
200  
200  
V
V
A
Maximum Average Forward Rectified Current  
IF(AV)  
Peak Forward Surge Current 8.3 ms Half Sine-wave  
Superimposed on Rated Load (JEDEC method)  
IFSM  
VF  
120  
A
V
Maximum Instantaneous Forward Voltage at 5 A  
0.65  
0.75  
300  
0.85  
0.9  
0.92  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
mA  
IR  
1
Typical Junction Capacitance 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
CJ  
Tj  
150  
pF  
- 55 to + 150  
- 55 to + 150  
Tstg  
Thermal Characteristics  
Symbol  
Value  
80  
Unit  
Parameter  
Maximum Thermal Resistance-Junction to Ambient 2)  
RθJA  
RθJC  
/W  
/W  
4.5  
Typical Thermal Resistance-Junction to Case  
1) Measured at 1MHz and applied reverse voltage of 5 V D.C.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
1 / 4  
®
Dated: 29/03/2022 Rev: 05  

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