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MBRB20200CT

更新时间： 2024-11-23 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
5页 58K
描述
SWITCHMODE Power Rectifier Dual Schottky Rectifier

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中文翻译

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MBRB20200CT 技术参数

是否无铅：含铅生命周期：End Of Life
零件包装代码：TO-263包装说明：R-PSSO-G2
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
Factory Lead Time：1 week风险等级：5.17
Is Samacsys：N应用：POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：2
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：200 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MBRB20200CT 数据手册

 浏览型号MBRB20200CT的Datasheet PDF文件第2页浏览型号MBRB20200CT的Datasheet PDF文件第3页浏览型号MBRB20200CT的Datasheet PDF文件第4页浏览型号MBRB20200CT的Datasheet PDF文件第5页 
MBRB20200CT  
SWITCHMODEt  
Power Rectifier  
Dual Schottky Rectifier  
This device uses the Schottky Barrier technology with a platinum  
barrier metal. This state−of−the−art device is designed for use in high  
frequency switching power supplies and converters with up to 48 V  
outputs. They block up to 200 V and offer improved Schottky  
performance at frequencies from 250 kHz to 5.0 MHz.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
20 AMPERES, 200 V  
Features  
• 200 V Blocking Voltage  
• Low Forward Voltage Drop  
• Guardring for Stress Protection and High dv/dt Capability  
(10,000 V/ms)  
• Dual Diode Construction − Terminals 1 and 3 Must be Connected for  
Parallel Operation at Full Rating  
1
4
3
• Pb−Free Packages are Available  
4
Mechanical Characteristics:  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
1
3
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
2
D PAK  
CASE 418B  
PLASTIC  
• Lead and Mounting Surface Temperature for Soldering  
Purposes: 260°C Max. for 10 Seconds  
• Device Meets MSL1 Requirements  
MARKING DIAGRAM  
MAXIMUM RATINGS (Per Leg)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
200  
V
RRM  
V
RWM  
V
AY WW  
R
Average Rectified Forward Current  
I
A
B20200G  
AKA  
F(AV)  
(At Rated V , T = 134°C)  
R
C
Per Leg  
10  
20  
Per Device  
Peak Repetitive Forward Current  
(At Rated V , Square Wave, 20 kHz,  
I
20  
150  
1.0  
A
A
A
FRM  
R
T
= +137°C) Per Leg  
C
Nonrepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
Peak Repetitive Reverse Surge Current  
I
RRM  
B20200 = Device Code  
(2.0 ms, 1.0 kHz)  
G
AKA  
= Pb−Free Package  
= Diode Polarity  
Storage Temperature Range  
T
−65 to +175  
−65 to +150  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
MBRB20200CT/D  
12345

中文翻译

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MBRB20200CT 替代型号

型号 品牌 替代类型 描述 数据表
MURB1620CTT4G ONSEMI

类似代替

 SWITCHMODE Power Rectifier
MBRB20200CTG ONSEMI

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 SWITCHMODE Power Rectifier Dual Schottky Rectifier
MURB1620CTRT4G ONSEMI

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 ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS

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