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MBRB20200CTT4 PDF预览

MBRB20200CTT4

更新时间： 2024-11-19 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
5页 58K
描述
SWITCHMODE Power Rectifier Dual Schottky Rectifier

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中文翻译

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MBRB20200CTT4 数据手册

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MBRB20200CT  
SWITCHMODEt  
Power Rectifier  
Dual Schottky Rectifier  
This device uses the Schottky Barrier technology with a platinum  
barrier metal. This state−of−the−art device is designed for use in high  
frequency switching power supplies and converters with up to 48 V  
outputs. They block up to 200 V and offer improved Schottky  
performance at frequencies from 250 kHz to 5.0 MHz.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
20 AMPERES, 200 V  
Features  
• 200 V Blocking Voltage  
• Low Forward Voltage Drop  
• Guardring for Stress Protection and High dv/dt Capability  
(10,000 V/ms)  
• Dual Diode Construction − Terminals 1 and 3 Must be Connected for  
Parallel Operation at Full Rating  
1
4
3
• Pb−Free Packages are Available  
4
Mechanical Characteristics:  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 1.7 Grams (Approximately)  
1
3
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
2
D PAK  
CASE 418B  
PLASTIC  
• Lead and Mounting Surface Temperature for Soldering  
Purposes: 260°C Max. for 10 Seconds  
• Device Meets MSL1 Requirements  
MARKING DIAGRAM  
MAXIMUM RATINGS (Per Leg)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
200  
V
RRM  
V
RWM  
V
AY WW  
R
Average Rectified Forward Current  
I
A
B20200G  
AKA  
F(AV)  
(At Rated V , T = 134°C)  
R
C
Per Leg  
10  
20  
Per Device  
Peak Repetitive Forward Current  
(At Rated V , Square Wave, 20 kHz,  
I
20  
150  
1.0  
A
A
A
FRM  
R
T
= +137°C) Per Leg  
C
Nonrepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
Peak Repetitive Reverse Surge Current  
I
RRM  
B20200 = Device Code  
(2.0 ms, 1.0 kHz)  
G
AKA  
= Pb−Free Package  
= Diode Polarity  
Storage Temperature Range  
T
−65 to +175  
−65 to +150  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
MBRB20200CT/D  
12345

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MBRB20200CTT4 替代型号

型号 品牌 替代类型 描述 数据表
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