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MBRB20100CT_09 PDF预览

MBRB20100CT_09

更新时间: 2024-11-06 11:11:35
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安森美 - ONSEMI 开关
页数 文件大小 规格书
4页 123K
描述
SWITCHMODE Power Rectifier

MBRB20100CT_09 数据手册

 浏览型号MBRB20100CT_09的Datasheet PDF文件第2页浏览型号MBRB20100CT_09的Datasheet PDF文件第3页浏览型号MBRB20100CT_09的Datasheet PDF文件第4页 
MBRB20100CT  
SWITCHMODEt  
Power Rectifier  
D2PAK Surface Mount Power Package  
2
The D PAK Power Rectifier is a stateoftheart device that  
employs the use of the Schottky Barrier principle with a platinum  
barrier metal.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIER  
Package Designed for Power Surface Mount Applications  
CenterTap Configuration  
Guardring for Stress Protection  
Low Forward Voltage  
20 AMPERES  
100 VOLTS  
175°C Operating Junction Temperature  
Epoxy Meets UL 94 V0 @ 0.125 in  
Short Heat Sink Tab Manufactured Not Sheared!  
Similar in Size to Industry Standard TO220 Package  
PbFree Packages are Available  
1
4
3
Mechanical Characteristics  
Case: Epoxy, Molded, Epoxy Meets UL 94 V0  
Weight: 1.4 Grams (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
2
4
D PAK  
CASE 418B  
STYLE 3  
Lead and Mounting Surface Temperature for Soldering Purposes:  
1
3
260°C Max. for 10 Seconds  
Device Meets MSL1 Requirements  
ESD Ratings: Machine Model, C >400 V  
Human Body Model, 3B >8000 V  
MARKING DIAGRAM  
MAXIMUM RATINGS (Per Leg)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
100  
V
RRM  
RWM  
AY WW  
B20100G  
AKA  
R
Average Rectified Forward Current  
I
10  
20  
A
A
A
F(AV)  
(Rated V , T = 110°C) Total Device  
R
C
Peak Repetitive Forward Current (Rated  
V , Square Wave, 20 kHz, T = 100°C)  
I
20  
FRM  
R
C
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
150  
FSM  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
Peak Repetitive Reverse Surge Current  
(2.0 ms, 1.0 kHz)  
I
0.5  
A
RRM  
B20100 = Device Code  
G
AKA  
= PbFree Package  
= Diode Polarity  
Storage Temperature Range  
T
65 to +175  
65 to +175  
10,000  
°C  
°C  
stg  
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. The heat generated must be less than the thermal conductivity from  
JunctiontoAmbient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 Rev. 8  
MBRB20100CT/D  
 

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