Datasheet > MBRB20100CT_09

MBRB20100CT_09

更新时间： 2024-11-23 11:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
4页	123K
描述
SWITCHMODE Power Rectifier

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MBRB20100CT_09 数据手册

MBRB20100CT

SWITCHMODEt

Power Rectifier

D²PAK Surface Mount Power Package

The D PAK Power Rectifier is a state−of−the−art device that

employs the use of the Schottky Barrier principle with a platinum

barrier metal.

http://onsemi.com

Features

SCHOTTKY BARRIER

RECTIFIER

• Package Designed for Power Surface Mount Applications

• Center−Tap Configuration

• Guardring for Stress Protection

• Low Forward Voltage

20 AMPERES

100 VOLTS

• 175°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Short Heat Sink Tab Manufactured − Not Sheared!

• Similar in Size to Industry Standard TO−220 Package

• Pb−Free Packages are Available

Mechanical Characteristics

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 1.4 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

D PAK

CASE 418B

STYLE 3

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL1 Requirements

• ESD Ratings: Machine Model, C >400 V

Human Body Model, 3B >8000 V

MARKING DIAGRAM

MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

AY WW

B20100G

AKA

Average Rectified Forward Current

F(AV)

(Rated V , T = 110°C) Total Device

Peak Repetitive Forward Current (Rated

V , Square Wave, 20 kHz, T = 100°C)

FRM

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

150

FSM

= Assembly Location

= Year

= Work Week

Peak Repetitive Reverse Surge Current

(2.0 ms, 1.0 kHz)

0.5

RRM

B20100 = Device Code

AKA

= Pb−Free Package

= Diode Polarity

Storage Temperature Range

−65 to +175

10,000

°C

stg

Operating Junction Temperature (Note 1)

Voltage Rate of Change (Rated V )

dv/dt

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

May, 2009 − Rev. 8

MBRB20100CT/D

12 3 4

中文翻译

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与MBRB20100CT_09相关器件

型号	品牌	获取价格	描述	数据表
MBRB20100CT1	MOTOROLA	获取价格	SWITCHMODE⑩ Schottky Power Rectifier D2PAK-SL
MBRB20100CT-1	INFINEON	获取价格	SCHOTTKY RECTIFIER
MBRB20100CT-1P	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-1PBF	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-1TRLP	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-1TRLPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-1TRRP	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-1TRRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 10 A
MBRB20100CT-20A	DGNJDZ	获取价格	20.0 A Schottky Barrier Rectifier
MBRB20100CT-4W	KERSEMI	获取价格	Trench MOS Schottky technology

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