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MBRB20100CT-E3/4W PDF预览

MBRB20100CT-E3/4W

更新时间: 2024-11-23 11:11:35
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 161K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

MBRB20100CT-E3/4W 数据手册

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New Product  
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
MBR2090CT  
MBR20100CT  
PIN 1  
MBRF2090CT  
MBRF20100CT  
1
1
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB2090CT  
MBRB20100CT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A x 2  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
90 V, 100 V  
150 A  
VF  
0.65 V  
Polarity: As marked  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR2090CT  
MBR20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
20  
10  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
0.5  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 89033  
Revision: 26-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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