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MBRB20100CT-4W PDF预览

MBRB20100CT-4W

更新时间： 2024-11-06 12:10:19
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
4页 1678K
描述
Trench MOS Schottky technology

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中文翻译

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MBRB20100CT-4W 数据手册

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MBR(F,B)2090CT & MBR(F,B)20100CT  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
• Lower power losses, high efficiency  
• Low forward voltage drop  
TO-220AB  
ITO-220AB  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
3
peak of 245 °C (for TO-263AB package)  
3
2
2
MBR2090CT  
MBR20100CT  
PIN 1  
MBRF2090CT  
MBRF20100CT  
1
1
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106 (for TO-220AB and ITO-220AB  
package)  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
TO-263AB  
K
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
1
MBRB2090CT  
MBRB20100CT  
PIN 1  
K
MECHANICAL DATA  
PIN 2  
HEATSINK  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 x 10 A  
90 V, 100 V  
150 A  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
0.65 V  
Polarity: As marked  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR2090CT  
MBR20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
20  
10  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
IFSM  
EAS  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
150  
130  
0.5  
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH per diode  
mJ  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 min  
VAC  
1500  
V
www.kersemi.com  
1
1234

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