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MBRB10H100HE3/45 PDF预览

MBRB10H100HE3/45

更新时间： 2024-01-06 21:46:09
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高压
页数 文件大小 规格书
5页 144K
描述
High-Voltage Schottky Rectifier

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MBRB10H100HE3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.37
Base Number Matches：1

MBRB10H100HE3/45 数据手册

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MBR(F,B)10H90 & MBR(F,B)10H100  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
2
2
1
1
MBR10H90  
MBRF10H90  
MBR10H100  
MBRF10H100  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 1  
CASE  
PIN 2  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB10H90  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB10H100  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
IF(AV)  
10 A  
VRRM  
IFSM  
VF  
90 V, 100 V  
250 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
0.64 V  
IR  
4.5 µA  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR10H90  
MBR10H100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
A
IF(AV)  
10  
250  
0.5  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
A
V/µs  
°C  
10 000  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
TJ, TSTG  
VAC  
- 65 to + 175  
1500  
V
Document Number: 88667  
Revision: 07-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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MBRB10H100HE3/45 替代型号

型号 品牌 替代类型 描述 数据表
MBRB10H90-E3/81 VISHAY

完全替代

 DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB10H90-E3/45 VISHAY

完全替代

 DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB10H100-E3/81 VISHAY

完全替代

 High-Voltage Schottky Rectifier

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MBRB10H35/31-E3 VISHAY

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