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MBRB10H90-E3/81 PDF预览

MBRB10H90-E3/81

更新时间： 2024-09-25 14:53:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 136K
描述
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB10H90-E3/81 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.38
Is Samacsys：NBase Number Matches：1

MBRB10H90-E3/81 数据手册

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MBR10Hxx, MBRF10Hxx, MBRB10Hxx  
www.vishay.com  
Vishay General Semiconductor  
High Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
MBR10H100  
MBRF10H100  
PIN 1  
PIN 1  
CASE  
PIN 2  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AC and ITO-220AC package)  
PIN 2  
TO-263AB  
• AEC-Q101 qualified available  
K
- Automotive ordering code: base P/NHE3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
MBRB10H100  
PIN 1  
K
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
10 A  
100 V  
250 A  
0.64 V  
Case: TO-220AC, ITO-220AC, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
IR  
TJ max.  
4.5 μA  
175 °C  
Package  
TO-220AC, ITO-220AC, TO-263AB  
Single  
Polarity: As marked  
Circuit configuration  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR10H100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VRRM  
VRWM  
VDC  
100  
100  
100  
10  
V
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
250  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
TJ, TSTG  
VAC  
0.5  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
-65 to +175  
1500  
V
Revision: 08-Jun-17  
Document Number: 88667  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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MBRB10H90-E3/81 替代型号

型号 品牌 替代类型 描述 数据表
MBRB10H100HE3/45 VISHAY

完全替代

 High-Voltage Schottky Rectifier
MBRB10H100-E3/81 VISHAY

完全替代

 High-Voltage Schottky Rectifier
MBRB10H100HE3/81 VISHAY

完全替代

 High-Voltage Schottky Rectifier

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