Datasheet > MBR5100G

MBR5100G

更新时间： 2024-11-15 01:17:47

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描述
5.0 A SCHOTTKY BARRIER DIODE

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MBR5100G 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBR540G-MBR5200G

5.0 A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip

TO-263/D²PAK

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O

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Mechanical Data

Case: TO-263/D²PAK, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

540G

MBR

545G

MBR

5100G

MBR

5150G

MBR

5200G

Characteristic

Symbol

Units

550G 560G 580G

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

105

200

140

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

(Note 1)

5. 0

100

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

FSM

0.70

280

0.85

0.92

Forward Voltage

@I_F= 5A

0.55

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.1

I^RM

350

200

°C/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

R^ꢀ

T^j, T^STG

-55 to +125

-55 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

www.senocn.com

MBR540G-MBR5200G

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