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MBR5045 PDF预览

MBR5045

更新时间: 2024-11-14 11:11:43
品牌 Logo 应用领域
GSG 肖特基二极管
页数 文件大小 规格书
1页 48K
描述
Chips for Schottky Diodes

MBR5045 数据手册

  
MBR5045  
Chips for Schottky Diodes  
Chip Specification  
General Description:  
Schottky Diode chips with Mo-barrier for switch mode power  
rectifiers with the following features:  
* Guard-ring for stress protection  
* Extremely low forward voltage  
* 125  
operation junction temperature  
* reverse avalanche behavior  
Mechanical Data:  
MBR5045 passivated Silicon Chip  
Dimension(mil): 200X200 mil  
Thickness:  
350 +- 20 m  
µ
Metallization:  
Top ( Anode ) :  
AlAg  
Bottom ( Cathode) : TiNiAg  
Forward Current (A):  
Reverse Voltage (V):  
50A  
>45V  
Type  
Chip  
VF(V)@25 C VF(V)@125 C IRM@VRMM  
size(mil)  
at If =50A  
at If =50A  
at 25 C  
MBR5045  
200X200 600mV  
550mV  
0,6mA  
* expected value for recommended assembling with both side soldering  
Typical device :1N6392  
Note: Other voltages & Top Metal AL are available  

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