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MBR3580 PDF预览

MBR3580

更新时间: 2024-11-09 12:26:27
品牌 Logo 应用领域
NAINA 二极管
页数 文件大小 规格书
2页 124K
描述
Schottky Power Diode, 35A

MBR3580 数据手册

 浏览型号MBR3580的Datasheet PDF文件第2页 
MBR3545 thru  
MBR35100R  
Naina Semiconductor Ltd.  
Schottky Power Diode, 35A  
Features  
Fast Switching  
Low forward voltage drop  
High surge capability  
High efficiency, low power loss  
Normal and Reverse polarity  
DO-203AA (DO-4)  
Maximum Ratings (TJ = 25oC, unless otherwise noted)  
Test  
Conditions  
Parameter  
Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit  
Repetitive peak reverse voltage  
RMS reverse voltage  
VRRM  
VRMS  
VDC  
IF  
45  
32  
45  
35  
60  
42  
60  
35  
80  
57  
80  
35  
100  
70  
V
V
V
A
DC blocking voltage  
100  
35  
Continuous forward current  
TC ≤ 110oC  
TC = 25oC  
Surge non-repetitive forward  
current, half-sine wave  
IFSM  
VF  
600  
0.68  
1.5  
600  
0.75  
1.5  
600  
0.84  
1.5  
600  
0.84  
1.5  
A
V
IF = 35 A  
TJ = 25oC  
Forward voltage  
VR = 20V,  
TJ = 25oC  
Reverse current  
IR  
mA  
VR = 20V,  
TJ = 125oC  
25  
25  
25  
25  
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)  
Parameters  
Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit  
Maximum thermal resistance, junction to  
case  
oC/  
W
oC  
Rth(JC)  
1.5  
Operating junction temperature range  
Storage temperature  
TJ  
Tstg  
F
-55 to 150  
-55 to 175  
2.0  
oC  
Mounting torque (non-lubricated threads)  
Approximate allowable weight  
Nm  
g
W
5.0  
1
D-95, Sector 63, Noida – 201301, India  
Tel: 0120-4205450  
Fax: 0120-4273653  
sales@nainasemi.com  
www.nainasemi.com  

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