VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3
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Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
Cathode
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-201AD (C-16)
3 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
50 V, 60 V
0.64 V
DESCRIPTION
VF at IF
The VS-MBR350..., VS-MBR350 axial leaded Schottky
rectifier has been optimized for very low forward voltage
drop, with moderate leakage. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
I
RM max.
15 mA at 125 °C
150 °C
TJ max.
Diode variation
EAS
Single die
5.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.0
UNITS
Rectangular waveform
A
V
50/60
tp = 5 μs sine
460
A
VF
3 Apk, TJ = 25 °C
0.73
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-MBR350
VS-MBR350-M3
VS-MBR360
VS-MBR360-M3
UNITS
Maximum DC reverse voltage
VR
50
50
60
60
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TL = 50 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
3.0
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 µs sine or 3 µs rect. pulse
460
Followinganyratedload
condition and with rated
VRRM applied
IFSM
10 ms sine or 6 ms rect. pulse
80
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1 A, L = 10 mH
5.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
1.0
Revision: 13-Oct-11
Document Number: 93450
1
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