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MBR350PBF PDF预览

MBR350PBF

更新时间: 2024-09-29 07:04:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 61K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, C-16, 2 PIN

MBR350PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.3其他特性:HIGH RELIABILITY, FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:460 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED

MBR350PBF 数据手册

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MBR350, MBR360  
Vishay High Power Products  
Schottky Rectifier, 3 A  
FEATURES  
• Low profile, axial leaded outline  
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
C-16  
• Lead (Pb)-free plating  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
3 A  
The MBR350, MBR360 axial leaded Schottky rectifier has  
been optimized for very low forward voltage drop, with  
moderate leakage. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VR  
VF at 3 A at 25 °C  
IRM  
50/60 V  
0.73 V  
15 mA at 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.0  
UNITS  
Rectangular waveform  
A
V
50/60  
tp = 5 µs sine  
460  
A
VF  
3 Apk, TJ = 25 °C  
0.73  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
MBR350  
MBR360  
UNITS  
Maximum DC reverse voltage  
50  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TL = 50 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 4  
IF(AV)  
3.0  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
Following any rated load  
condition and with rated  
RRM applied  
5 µs sine or 3 µs rect. pulse  
460  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 10 mH  
80  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
5.0  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by, TJ maximum VA = 1.5 x VR typical  
1.0  
Document Number: 93450  
Revision: 06-Nov-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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