Datasheet > MBR340_12

MBR340_12

更新时间： 2024-11-09 11:11:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	119K
描述
Schottky Rectifier, 3 A

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MBR340_12 数据手册

VS-MBR340, VS-MBR340-M3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

Cathode

Anode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

C-16

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for commercial level

PRODUCT SUMMARY

Package

DO-201AD (C-16)

3 A

• Halogen-free according to IEC 61249-2-21 definition

(-M3 only)

I_F(AV)

V_R

40 V

DESCRIPTION

V_Fat I_F

0.49 V

The VS-MBR340... axial leaded Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. Typical applications are in switching power

supplies, converters, freewheeling diodes, and reverse

battery protection.

_RMmax.

20 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

6.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

3.0

UNITS

Rectangular waveform

t_p= 5 μs sine

430

V_F

3 Apk, T_J= 25 °C

0.6

T_J

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR340

VS-MBR340-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 92 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 4

I_F(AV)

3.0

Maximum peak one cycle

non-repetitive surge current

See fig. 6

5 µs sine or 3 µs rect. pulse

430

Followinganyratedload

condition and with rated

I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1 A, L = 12 mH

6.0

Current decaying linearly to zero in 1 μs

Frequency limited by, T_Jmaximum V_A= 1.5 x V_Rtypical

1.0

Revision: 19-Sep-11

Document Number: 93449

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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