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MBR340G

更新时间： 2024-09-29 04:41:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管瞄准线功效
页数 文件大小 规格书
4页 60K
描述
Axial Lead Rectifier

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中文翻译

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MBR340G 数据手册

 浏览型号MBR340G的Datasheet PDF文件第2页浏览型号MBR340G的Datasheet PDF文件第3页浏览型号MBR340G的Datasheet PDF文件第4页 
MBR340  
Preferred Device  
Axial Lead Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlap  
contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIER  
3.0 AMPERES, 40 VOLTS  
• Extremely Low V  
• Low Power Loss/High Efficiency  
• Highly Stable Oxide Passivated Junction  
• Low Stored Charge, Majority Carrier Conduction  
• Pb−Free Packages are Available*  
F
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 1.1 Gram (Approximately)  
AXIAL LEAD  
CASE 267−05  
(DO−201AD)  
STYLE 1  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Cathode indicated by Polarity Band  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
A
MBR  
340  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
V
RRM  
V
RWM  
YYWWG  
V
I
R
G
Average Rectified Forward Current T = 65°C  
3.0  
80  
A
A
A
O
(R  
q
= 28°C/W, P.C. Board Mounting)  
JA  
A
= Assembly Location  
= Year  
= Work Week  
Non−Repetitive Peak Surge Current (Note 1)  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz, T = 75°C)  
I
YY  
WW  
G
FSM  
L
= Pb−Free Package  
(Note: Microdot may be in either location)  
Operating and Storage Junction Temperature  
Range (Reverse Voltage Applied) (Note 2)  
T , T  
−65 to  
+175  
°C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Rating  
†
Device  
Package  
Shipping  
Symbol  
Max  
Unit  
MBR340  
Axial Lead  
500 Units / Bag  
Thermal Resistance, Junction−to−Ambient  
(see Note 5, Mounting Method 3)  
R
28  
°C/W  
q
JA  
MBR340G  
Axial Lead  
(Pb−Free)  
500 Units / Bag  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Lead Temperature reference is cathode lead 1/32 in from case.  
2. The heat generated must be less than the thermal conductivity from  
MBR340RL  
Axial Lead  
1500/Tape & Reel  
1500/Tape & Reel  
MBR340RLG  
Axial Lead  
(Pb−Free)  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 7  
MBR340/D  
 
1234

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MBR340G 替代型号

型号 品牌 替代类型 描述 数据表
1N5822RLG ONSEMI

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1N5822G ONSEMI

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