Datasheet > MBR3045CT-N3

MBR3045CT-N3

更新时间： 2024-11-24 11:11:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	168K
描述
Schottky Rectifier, 2 x 15 A

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MBR3045CT-N3 数据手册

VS-MBR3045CTPbF, VS-MBR3045CT-N3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AB

2 x 15 A

45 V

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

DESCRIPTION

V_Fat I_F

See Electrical table

100 mA at 125 °C

150 °C

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

T_Jmax.

Diode variation

E_AS

Common cathode

10 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

35/45

T_C= 123 °C (per leg)

t_p= 5 μs sine

1020

V_F

20 A_pk, T_J= 125 °C

Range

0.6

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-MBR3045CTPbF

VS-MBR3045CT-N3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 123 °C, rated V_R

VALUES

UNITS

per leg

Maximum average

forward current

I_F(AV)

I_FRM

per device

Peak repetitive forward current per leg

Rated V_R, square wave, 20 kHz, T_C= 123 °C

Following any rated load

5 µs sine or 3 µs rect. pulse condition and with rated

_RRMapplied

1020

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

200

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 2 A, L = 5 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 26-Aug-11

Document Number: 94292

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与MBR3045CT-N3相关器件

型号	品牌	获取价格	描述	数据表
MBR3045CTP	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTP	DIODES	获取价格	30A SCHOTTKY BARRIER RECTIFIER
MBR3045CTP	KERSEMI	获取价格	This center tap Schottky rectifier has been optimized for low
MBR3045CTPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTPBF_12	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTR	THINKISEMI	获取价格	30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
MBR3045CTTRLP	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTTRLPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTTRRP	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045CTTRRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A

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