Datasheet > MBR3045F

MBR3045F

更新时间： 2024-01-07 05:05:59

品牌	Logo	应用领域
ASEMI		高压
页数	文件大小	规格书
3页	520K
描述
Dual High-Voltage Schottky Rectifiers

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中文翻译

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数据手册

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MBR3045F 数据手册

MBR3040 THUR MBR3050

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 40V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 30A

VRRM= 45V

IF(AV)= 30A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

VRRM= 50V

IF(AV)= 30A

● Low Voltage Continued Circuit and Protection Circuit.

■ MBR3040、MBR3045、MBR3050 Schottky diode,in the

manufacture uses the main process technology includes:

Silicon epitaxial substrate, P+ loop technology,The

potential metal and the silicon alloy technology, the

device uses the two chip, the common cathode, the plastic

package structure.

Polarity

Absolute Maximum Ratings

Item

MBR3050

Symbol MBR3040 MBR3045

Unit

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Represent

ative

Test Condition

Item

Minimum

MBR3040 MBR3045 MBR3050 Unit

500

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=15A

0.70 0.72

0.74 V

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