Datasheet > 二极管 > 整流二极管> MBR2090CTTRRPBF

MBR2090CTTRRPBF

更新时间： 2024-11-07 11:11:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	179K
描述
Schottky Rectifier, 2 x 10 A

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中文翻译

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MBR2090CTTRRPBF 数据手册

VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series

Vishay High Power Products

Schottky Rectifier, 2 x 10 A

FEATURES

• 150 °C T_Joperation

VS-MBR20 ...CT-1PbF

VS-MBRB20...CTPbF

• Low forward voltage drop

• High frequency operation

• Center tap D²PAK and TO-262 packages

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

Base

common

cathode

Base

common

cathode

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

Common

cathode

Common

cathode

Anode

D²PAK

TO-262

DESCRIPTION

This center tap Schottky rectifier has been optimized for

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

I_F(AV)

2 x 10 A

V_R

80 V to 100 V

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

I_FRM

CHARACTERISTICS

Rectangular waveform (per device)

T_C= 133 °C (per leg)

VALUES

UNITS

V_RRM

I_FSM

80 to 100

850

t_p= 5 μs sine

10 Apk, T_J= 125 °C

Range

V_F

0.70

T_J

- 65 to 150

°C

VOLTAGE RATINGS

VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF

VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF

PARAMETER

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

per leg

Maximum average

forward current

I_F(AV)

I_FRM

T_C= 133 °C, rated V_R

per device

Peak repetitive forward current per leg

Rated V_R, square wave, 20 kHz, T_C= 133 °C

5 μs sine or

3 μs rect. pulse

Following any rated load ondition

and with rated V_RRMapplied

850

150

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

Peak repetitive reverse surge current

Non-repetitive avalanche energy per leg

I_RRM

E_AS

2.0 μs, 1.0 kHz

0.5

T_J= 25 °C, I_AS= 2 A, L = 12 mH

Document Number: 94306

Revision: 16-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与MBR2090CTTRRPBF相关器件

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