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MBR2090GCT-1PBF PDF预览

MBR2090GCT-1PBF

更新时间: 2024-11-08 09:51:51
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
7页 240K
描述
Rectifier Diode, Schottky, 10A, 90V V(RRM),

MBR2090GCT-1PBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
最大非重复峰值正向电流:150 A最高工作温度:150 °C
最大输出电流:10 A最大重复峰值反向电压:90 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKYBase Number Matches:1

MBR2090GCT-1PBF 数据手册

 浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第2页浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第3页浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第4页浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第5页浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第6页浏览型号MBR2090GCT-1PBF的Datasheet PDF文件第7页 
Bulletin PD-21166 09/06  
MBRB20...GCTPbF  
MBR20...GCT-1PbF  
SCHOTTKY RECTIFIER  
20 Amp  
IF(AV) = 20 Amp  
VR = 80/100V  
Description/ Features  
Major Ratings and Characteristics  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150° C junction  
temperature. Typical applications are in switching power  
supplies, converters, free-wheeling diodes, and reverse bat-  
tery protection.  
Characteristics  
Values  
Units  
I
Rectangular waveform  
20  
A
F(AV)  
(Per Device)  
I
@ T =133°C  
C
20  
A
FRM  
150° C T operation  
J
(PerLeg)  
Center tap D2Pak and TO-262 packages  
Low forward voltage drop  
V
I
80/ 100  
850  
V
A
RRM  
High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
@ tp=5μssine  
FSM  
High frequency operation  
V
@ 10Apk,T =125°C  
J
0.70  
V
F
J
Guardringforenhancedruggednessandlongterm  
reliability  
T
range  
-65to150  
°C  
Lead-Free("PbF"suffix)  
Case Styles  
MBRB20...GCTPbF  
MBR20...GCT-1PbF  
Base  
Common  
Cathode  
2
Base  
Common  
Cathode  
2
2
Common  
Cathode  
2
1
3
1
Common  
Cathode  
3
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
www.irf.com  
1

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