Datasheet > MBR2065CT

MBR2065CT

更新时间： 2024-11-20 00:56:23

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	1631K
描述
20A Surface Mount High Power Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR2065CT 数据手册

MBR2040BCT THRU MBR20200BCT

20A Surface Mount High Power Schottky Barrier Rectifiers

■ Features

■ Outline

D²PAK(TO-263)

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

•Silicon epitaxial planar chip, metal silicon junction.

•Suffix "H" indicates Halogen-free part, ex.MBR2040BCTH. Lead-

f•ree parts meet environmental standards of

MIL-STD-19500 /228

0.411(10.45)

0.380(9.65)

0.245(6.22)

MIN

0.055(1.40)

0.031(0.80)

0.190(4.83)

0.160(4.06)

0.055(1.40)

0.045(1.14)

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-263 / D²PAK

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

Dimensions in inches and (millimeters)

• Weight : Approximated 1.70 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@10A, T_A= 25^OC @10A, T_A= 125^OC

V_F(V)

MBR2040CT

MBR2045CT

MBR2060CT

MBR2065CT

MBR20100CT

MBR20150CT

MBR20200CT

31.5

MBR2040BCT

MBR2045BCT

MBR2060BCT

MBR2065BCT

MBR20100BCT

MBR20150BCT

MBR20200BCT

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

下载PDF

与MBR2065CT相关器件

型号	品牌	获取价格	描述	数据表
MBR2065CT-J	LGE	获取价格	20A High Power Schottky Barrier Rectifiers
MBR2065F	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR2065FCT	YANGJIE	获取价格	ITO-220AB
MBR2065H	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR2070	MDD	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR2070	SUNMATE	获取价格	Rectifier device Schottky Diode
MBR2070CT	KERSEMI	获取价格	SWITCHMODE POWER RECTIFIERS
MBR2070CT	BL Galaxy Electrical	获取价格	DUAL SCHOTTKY RECTIFIERS
MBR2070CT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR2070CT	DIODES	获取价格	20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

与MBR2065CT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR2065CT

MBR2065CT 数据手册

与MBR2065CT相关器件

与MBR2065CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR2065CT

MBR2065CT 数据手册

与MBR2065CT相关器件

与MBR2065CT相关文章

您还可以找

您在本页遇到什么问题？