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MBR2070CT PDF预览

MBR2070CT

更新时间: 2024-11-22 22:46:23
品牌 Logo 应用领域
美台 - DIODES 高压
页数 文件大小 规格书
2页 68K
描述
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

MBR2070CT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:70 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

MBR2070CT 数据手册

 浏览型号MBR2070CT的Datasheet PDF文件第2页 
MBR2070CT - MBR20100CT  
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
TO-220AB  
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
L
Dim  
A
B
C
D
E
Min  
14.22  
9.65  
2.54  
5.84  
¾
Max  
15.88  
10.67  
3.43  
B
M
C
D
E
·
·
K
A
6.86  
6.35  
1
2
3
G
H
J
12.70  
2.29  
0.51  
14.73  
2.79  
G
1.14  
Mechanical Data  
J
N
K
L
3.53Æ 4.09Æ  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 2.24 grams (approx)  
Mounting Position: Any  
3.56  
1.14  
0.30  
2.03  
4.83  
1.40  
0.64  
2.92  
H
H
P
M
N
P
Pin 1  
Pin 2  
Pin 3  
·
·
·
·
Case  
All Dimensions in mm  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
2070CT  
MBR  
2080CT  
MBR  
2090CT  
MBR  
20100CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
49  
80  
56  
90  
63  
100  
70  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
(Note 1)  
20  
@ TC = 125°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
150  
A
Forward Voltage Drop  
@ IF = 10A, Tj = 125°C  
0.75  
0.85  
0.85  
0.95  
@ IF = 10A, Tj = 25°C  
@ IF = 20A, Tj = 125°C  
@ IF = 20A, Tj = 25°C  
VFM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TA  
= 25°C  
0.15  
150  
IRM  
mA  
@ TA = 125°C  
Cj  
Typical Junction Capacitance (Note 2)  
1000  
2.0  
pF  
RqJc  
dV/dt  
Typical Thermal Resistance Junction to Case (Note 1)  
Voltage Rate of Change  
°C/W  
V/ms  
10000  
Tj  
TSTG  
-65 to +150  
-65 to +175  
Operating and Storage Temperature Range  
°C  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
DS30019 Rev. C-2  
1 of 2  
MBR2070CT-MBR20100CT  

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