Datasheet > MBR2070CT

MBR2070CT

更新时间： 2024-10-01 12:34:27

品牌	Logo	应用领域
科盛美 - KERSEMI		开关
页数	文件大小	规格书
3页	790K
描述
SWITCHMODE POWER RECTIFIERS

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中文翻译

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数据手册

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MBR2070CT 数据手册

. . . using the Schottky Barrier principle with a platinum barrier metal. These

state–of–the–art devices have the following features:

•

20 Amps Total (10 Amps Per Diode Leg)

Guard–Ring for Stress Protection

Low Forward Voltage

150°C Operating Junction Temperature

Guaranteed Reverse Avalanche

Epoxy Meets UL94, VO at 1/8″

Low Power Loss/High Efficiency

High Surge Capacity

MBR2060CT and MBR20100CT

are Motorola Preferred Devices

SCHOTTKY BARRIER

RECTIFIERS

Low Stored Charge Majority Carrier Conduction

Mechanical Characteristics:

20 AMPERES

•

Case: Epoxy, Molded

Weight: 1.9 grams (approximately)

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

60–100 VOLTS

•

Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

Shipped 50 units per plastic tube

Marking: B2060, B2070, B2080, B2090, B20100

2, 4

CASE 221A–06

TO–220AB

PLASTIC

MAXIMUM RATINGS PER DIODE LEG

Rating

MBR

2060CT 2070CT 2080CT 2090CT 20100CT

60 70 80 90 100

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Volts

RRM

RWM

Average Rectified Forward Current

Amps

F(AV)

(Rated V ) T = 133°C

Peak Repetitive Forward Current

FRM

(Rated V , Square Wave, 20 kHz) T = 133°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave,

single phase, 60 Hz)

150

FSM

Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz)

Operating Junction Temperature

0.5

Amp

°C

RRM

65 to +150

65 to +175

10,000

Storage Temperature

stg

°C

Voltage Rate of Change (Rated V )

dv/dt

V/µs

THERMAL CHARACTERISTICS

Maximum Thermal Resistance — Junction to Case

— Junction to Ambient

θJC

θJA

2.0

°C/W

Rectifier Device Data

www.kersemi.com

12 3

中文翻译

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