Datasheet > MBR2065F

MBR2065F

更新时间： 2024-11-19 07:08:11

品牌	Logo	应用领域
ASEMI		高压
页数	文件大小	规格书
3页	503K
描述
Dual High-Voltage Schottky Rectifiers

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数据手册

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MBR2065F 数据手册

MBR2060 THUR MBR2065

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 60V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 20A

VRRM= 65V

IF(AV)= 20A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection Circuit.

Polarity

■ MBR2060、MBR2065 Schottky diode,in the manufacture uses

the main process technology includes: Silicon epitaxial

substrate, P+ loop technology,The potential metal and the

silicon alloy technology, the device uses the two chip, the

common cathode, the plastic package structure.

Absolute Maximum Ratings

Item

Symbol MBR2060 MBR2065

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

Unit

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Representat

ive

Test Condition

Unit

Item

Minimum

MBR2060 MBR2065

100

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=10A

0.75

0.77

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