Datasheet > MBR2045CT-T

MBR2045CT-T

更新时间： 2024-11-21 01:25:59

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	482K
描述
20A High Power Trench Schottky Barrier Rectifier

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MBR2045CT-T 数据手册

MBR2045CT-T

20A High Power Trench Schottky Barrier Rectiﬁer

Chip Integration Technology Corporation

Main Product Characteristics

■Outline

Dimensions in inches(millimeters)

TO-220AB

symbol

Min

Max

I_F(AV)

V_RRM

T_J

10A x 2

45V

150^OC

ØP

0.398(10.1)

0.236(6.0)

0.579(14.7)

0.543(13.8)

0.143(3.63)

0.104(2.64)

0.335(8.5)

0.046(1.17)

0.028(0.71)

0.098(2.49)

0.176(4.47)

0.046(1.17)

0.102(2.6)

0.019(0.28)

0.147(3.74)

0.406(10.3)

0.252(6.4)

0.594(15.1)

0.551(14.0)

0.159(4.03)

0.112(2.84)

0.350(8.9)

0.054(1.37)

0.036(0.91)

0.102(2.59)

0.184(4.67)

0.054(1.37)

0.110(2.8)

0.021(0.48)

0.155(3.94)

Marking code

V_F(Typ)

0.53V

■ Features

ØP

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

Alternate

Dimensions in inches(millimeters)

symbol

Min

0.394(10.0)

0.228(5.8)

Max

0.413(10.5)

0.268(6.8)

ØP

0.570(14.48) 0.625(15.87)

0.519(13.18) 0.558(14.18)

0.089(3.5)

0.100(2.54)

0.330(8.38)

0.045(1.15)

0.029(0.75)

0.095(2.42)

0.160(4.07)

0.045(1.15)

0.080(2.04)

0.013(0.33)

0.148(3.75)

0.099(3.9)

0.120(3.04)

0.350(8.9)

0.060(1.52)

0.037(0.95)

0.105(2.66)

0.190(4.82)

0.055(1.39)

0.110(2.8)

■ Mechanical Data

Marking code

• Epoxy : UL94-V0 rated ﬂame retardant.

• Case : JEDEC ITO-220AB molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 202. 6

ØP

0.019(0.52)

0.156(3.95)

• Polarity: As marked.

• Weight : Approximated 2.25 gram.

Dimensions in inches and (millimeters)

■ Circuit Diagram

■ Maximum Ratings

Rating at 25^OC ambient temperature unless otherwise speciﬁed.

Parameter

Condition

Symbol

V_RWM

I_O

UNIT

MBR2045CT-T

Working Peak Reverse Voltage

Forward Rectiﬁed Current (total device)

8.3ms single half sine-wave

superimposed on rate load (JEDEC method)

Forward Surge Current (per diode)

I_FSM

150

Pulse width 2us, 1000Hz, square wave

I_RRM

(per diode)

Peak Repetitive Reverse Surge Current

at T_A25^oC,10 cycles

R_θJC

R_θJA

T_STG

T_J

Junction to case

^OC/W

Thermal Resistance (per diode)

Junction to ambient

^OC

Storage Temperature

-55 ~ +150

Operating Junction Temperature

■ Electrical Characteristics

Rating at 25^OC ambient temperature unless otherwise speciﬁed.

Parameter

Condition

I_F= 3A, T_J= 25^OC

I_F= 10A, T _J= 25^OC

I_F= 10A, T _J= 125^OC

V_R= V_RWM, T_J= 25^OC

V_R= V_RWM, T_J= 125^OC

I_R= 0.1mA, T_J= 25^OC

Symbol

V_F

MIN.

TYP.

MAX.

UNIT

440

Forward Voltage Drop (per diode)

560

530

0.005

620

0.1

I_R

Reverse Current (per diode)

V_BR

Reverse Breakdown Voltage (per diode)

Document ID : DS-11KIN

Revised Date : 2016/06/14

Revision : C

12 3

中文翻译

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