Datasheet > 暂无类别数据> MBR2045FCT-B

MBR2045FCT-B

更新时间： 2024-11-24 13:11:11

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美微科 - MCC		/
页数	文件大小	规格书
2页	100K
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MBR2045FCT-B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MBR2020

THRU

MBR20100

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

High surge capacity, High current capability

20 Amp

Schottky Barrier

Rectifier

20 to 100 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AC

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

20V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MBR2020 MBR2020

MBR2030 MBR2030

MBR2035 MBR2035

MBR2040 MBR2040

MBR2045 MBR2045

MBR2060 MBR2060

MBR2080 MBR2080

14V

21V

24.5V

28V

31.5V

42V

20V

30V

35V

40V

45V

60V

80V

30V

35V

40V

45V

60V

80V

56V

MBR20100 MBR20100

100V

70V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

20A

T_C= 135°C

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢇ ꢇ ꢇ ꢇ

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

INCHES

ꢀꢁꢂ

ꢂꢁꢄ

ꢂꢈꢉ

ꢂꢁꢄ

15.11

9.65

ꢂꢈꢉ

15.75

10.29

4.82

ꢄꢆꢊꢃ

.595

.380

.160

.620

.405

.190

4.06

.025

.142

.190

.110

.018

.500

.045

.035

.147

.210

.130

.025

.562

.060

0.64

3.61

4.83

2.79

0.46

12.70

1.14

0.89

3.73

5.33

3.30

0.64

14.27

1.52

Maximum Forward

Voltage Drop Per

V_F

.63V

I_FM= 20A per

element;

T_A= 25°C*

MBR2020-2045

MBR2060

Element

.75V

.84V

MBR2080-20100

.100

.120

2.54

3.04

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.080

.045

.235

------

.110

.055

.255

.050

2.04

1.14

5.97

-----

2.79

1.39

6.48

1.27

0.1mA T_J= 25°C

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

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