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MBR2045EMFST1G PDF预览

MBR2045EMFST1G

更新时间: 2024-11-21 01:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 功效瞄准线光电二极管
页数 文件大小 规格书
5页 63K
描述
Switch-mode Power Rectifiers

MBR2045EMFST1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SO-8FL, DFN5, 6 PINReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:1.5其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.64 V
JESD-30 代码:R-PDSO-F5JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:5最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:45 V最大反向电流:400 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR2045EMFST1G 数据手册

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MBR2045EMFS,  
NRVB2045EMFS  
Switch-mode  
Power Rectifiers  
These state−of−the−art devices have the following features:  
http://onsemi.com  
Features  
Low Power Loss / High Efficiency  
SCHOTTKY BARRIER  
RECTIFIERS  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
20 AMPERES  
45 VOLTS  
Guardring for Stress Protection  
Low Forward Voltage Drop  
150°C Operating Junction Temperature  
Wettable Flacks Option Available  
5,6  
1,2,3  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING  
DIAGRAM  
These are Pb−Free and Halide−Free Devices  
A
C
C
1
Mechanical Characteristics:  
A
A
B2045E  
AYWZZ  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Case: Epoxy, Molded  
Not Used  
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
Lead Finish: 100% Matte Sn (Tin)  
B2045E = Specific Device Code  
Lead and Mounting Surface Temperature for Soldering Purposes:  
A
Y
= Assembly Location  
= Year  
260°C Max. for 10 Seconds  
Device Meets MSL 1 Requirements  
W
ZZ  
= Work Week  
= Lot Traceability  
Applications  
Excellent Alternative to DPAK in Space−Constrained Automotive  
Applications  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
1500 /  
Output Rectification in Compact Portable Consumer Applications  
Freewheeling Diode used with Inductive Loads  
MBR2045EMFST1G  
SO−8 FL  
(Pb−Free) Tape & Reel  
MBR2045EMFST3G  
NRVB2045EMFST1G  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
NRVB2045EMFST3G  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
May, 2014 − Rev. 1  
MBR2045EMFS/D  

MBR2045EMFST1G 替代型号

型号 品牌 替代类型 描述 数据表
NRVB2045EMFST3G ONSEMI

完全替代

Switch-mode Power Rectifiers
NRVB2045EMFST1G ONSEMI

完全替代

Switch-mode Power Rectifiers
MBR2045EMFST3G ONSEMI

完全替代

Switch-mode Power Rectifiers

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