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MBR20150CT PDF预览

MBR20150CT

更新时间: 2024-11-10 02:54:47
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美台 - DIODES 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 211K
描述
High Temperature Schottky Barrier Rectifier Diodes

MBR20150CT 数据手册

 浏览型号MBR20150CT的Datasheet PDF文件第2页 
MBR2070CT - MBR20100CT  
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
Guard Ring Die Construction for  
TO-220AB  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
Dim  
A
B
C
D
E
Min  
14.48  
10.00  
2.54  
5.90  
2.80  
12.70  
2.40  
0.69  
3.54  
4.07  
1.15  
0.30  
2.04  
Max  
15.75  
10.40  
3.43  
6.40  
3.93  
14.27  
2.70  
0.93  
3.78  
4.82  
1.39  
0.50  
2.79  
Lead Free Finish/RoHS Compliant (Note 3)  
G
H
J
Mechanical Data  
Case: TO-220AB  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Polarity: As Marked on Body  
Terminals: Finish – Tin. Solderable per MIL-STD-202,  
Method 208  
Marking: Type Number  
Ordering Information: See Page 2  
Weight: 2.24 grams (approximate)  
K
L
M
N
P
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
2070CT  
MBR  
2080CT  
MBR  
2090CT  
MBR  
20100CT  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
Unit  
VRRM  
VRWM  
VR  
70  
49  
80  
56  
90  
63  
100  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
70  
V
A
20  
Average Rectified Output Current (Note 1)  
@ TC = 120°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
IFSM  
VFM  
IRM  
150  
A
Forward Voltage Drop  
@ IF = 10A, Tj = 125°C  
@ IF = 10A, Tj = 25°C  
@ IF = 20A, Tj = 125°C  
@ IF = 20A, Tj = 25°C  
@ TA = 25°C  
0.75  
0.85  
0.85  
0.95  
V
Peak Reverse Current  
0.10  
100  
mA  
at Rated DC Blocking Voltage (Note 4)  
@ TA = 125°C  
Typical Total Capacitance (Note 2)  
CT  
RθJC  
dV/dt  
Tj  
1000  
2.0  
pF  
°C/W  
V/μs  
°C  
Typical Thermal Resistance Junction to Case (Note 1)  
Voltage Rate of Change  
10000  
Operating Temperature Range  
-55 to +150  
-55 to +175  
Storage Temperature Range  
TSTG  
°C  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.  
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.  
4. Short duration pulse test to minimize self-heating effect.  
DS30019 Rev. 7 - 2  
1 of 2  
MBR2070CT-MBR20100CT  
© Diodes Incorporated  
www.diodes.com  

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