SMD Schottky Barrier Rectifiers
Comchip
S M D D i o d e S p e c i a l i s t
MBR2030CT-G Thru. MBR20150CT-G
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
Features
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
TO-220AB
0.187(4.70)
0.148(3.80)
0.055(1.40)
0.047(1.20)
0.108
0.153(3.90)
0.146(3.70)
0.413(10.50)
0.347( 9.50)
(2.75)
-High current capability, low VF.
-High surge capacity.
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
Mechanical Data
0.157
(4.0)
0.583(14.80)
0.531(13.50)
0.051(1.30)
MAX
-Case: TO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
0.024(0.60)
0.012(0.30)
0.102(2.60)
0.091(2.30)
0.043(1.10)
0.032(0.80)
0.126
(3.20)
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
MBR
MBR
MBR
MBR
MBR
MBR
MBR
Symbol
Parameter
Unit
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G
Maximum Recurrent Peak Reverse Voltage
V
RRM
RMS
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
150
105
150
V
V
V
V
Maximum RMS Voltage
V
DC
100
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current ( See Fig.1 )
I
(AV)
20.0
150
A
A
Peak Forward Surage Current ,
IFSM
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load(JEDEC Method)
IF=10A@ TJ= 25°C
-
0.80
0.70
0.95
0.85
0.10
10.0
0.85
0.75
0.95
0.85
0.10
7.50
0.95
0.85
1.05
0.95
0.10
5.00
IF=10A@ TJ=125°C
IF=20A@ TJ= 25°C
IF=20A@ TJ=125°C
@ TJ= 25°C
0.57
0.84
0.72
0.10
15.0
Peak Forward Voltage
(Note 1)
V
F
V
Maximum DC Reverse Current
at Rate DC Blocking Voltage
mA
IR
@ TJ= 125°C
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
pF
°C/W
°C
C
J
400
320
R
θJC
1.50
3.50
TJ
-55 to +150
-55 to +175
TSTG
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
REV:B
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QW-BB046
Comchip Technology CO., LTD.