Datasheet > MBR20150CT

MBR20150CT

更新时间： 2024-11-09 11:11:59

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描述
Dual High Voltage Schotty Rectifier

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数据手册

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MBR20150CT 数据手册

August 2008

MBR20150CT

Dual High Voltage Schotty Rectifier

Features:

•

Low Forward Voltage Drop

PIN1

PIN3

Low Power Loss and High Efficiency

High Surge Capability

PIN2

Rohs Compliant

Matte Tin(Sn) Lead Finish

Mark : MBR20150CT

Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C

Wave Soldering or per MIL-STD-750 Method 2026.

Absolute Maximum Ratings* T_a= 25°C unless otherwise noted

Symbol

Parameter

Maximum Repetitive Reverse Voltage

Maximum DC Reverse Voltage

Value

150

Unit

V_RRM

V_R

150

10 (Per Leg)

20(Per Device)

I_F(AV)

Average Rectified Forward Current, Tc=120°C

I_FSM

T_STG

T_J

Peak Forward Surge Current, 8.3mS Half Sine wave

Storage Temperature Range

150

-55 ~ 150

°C

Operating Junction Temperature

150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T_a=25°C unless otherwise noted

Symbol

Parameter

Max

1.5

Unit

°C/W

R_θJC

Thermal Resistance, Junction to Case per Leg

R_θJA

Thermal Resistance, Junction to Ambient per Leg

62.5

* MIL standard 883-1012 & JESD51-10

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Max.

Unit

V_R= 150V

T_C

25 °C

0.2

I_R

Reverse Current

_C= 125 °C

I_F= 10A

I_F= 20A

T_C25 °C

_C= 125 °C

T_C25 °C

_C= 125 °C

0.85

0.75

0.95

0.85

V_F

Forward Voltage

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

MBR20150CT Rev. 1.0.0

www.fairchildsemi.com

12 3 4

中文翻译

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