Datasheet > MBR20120L

MBR20120L

更新时间： 2024-11-07 01:12:47

品牌	Logo	应用领域
松钜 - BYTESONIC		/
页数	文件大小	规格书
3页	469K
描述
LOW VF SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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MBR20120L 数据手册

MBR20120LCT

MBR20120LFCT

LOW VF SCHOTTKY BARRIER RECTIFIER

Features

VOLTAGE RANGE

120 Volts

Low power loss, high efficiency

High current capability, low forward voltage drop

CURRENT

20.0 Ampere

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

ITO-220AB

TO-220AB

High surge current capability

Guard-ring for overvoltage protection

For use in low voltage - high frequency inventor,

free wheeling, and polarity protection application

PIN 1

PIN 3

PIN 1

PIN 3

Mechanical Data

CASE

PIN 2

CASE

PIN 2

Positive CT

Suffix "C"

Positive CT

Suffix "C"

Terminals: Pure tin plated leads, solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in- lbs, max

MBR20120LFCT

MBR20120LCT

Weight: 1.72 grams

Weight: 1.92 grams

MAXIMUM RATINGS A = 25 °C unless otherwise note

PARAMETER

SYMBOL

UNIT

MBR20120L

Maximum repetitive peak

reverse voltage

120

VRRM

Maximum RMS voltage

V^RMS

V^DC

Maximum DC blocking

voltage

120

Maximum average forward

rectified current

I_F(AV)

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

I^FSM

150

Operating junction and

storage temperature range

-55 to +150

_TJ, T_STG

°C

dv/dt

10,000

V/ms

Voltage Rate of Change (Rated V )

ELECTRICAL CHARACTERISTICS

(T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

UNIT

TYP.

0.54

0.61

MAX.

_F=3A

----

T_A=25℃

I_F=5A

Instantaneous

Forward Vltage

I_F=10A

0.79

0.47

0.50

0.85

----

V_F

_F=3A

Volts

----

I_F=5A

T_A=125℃

0.69

0.10

I_F=10A

0.64

0.02

T_A=25℃

Instantaneous reverse

current

Rated VR

I_R

C_J

T_A=125℃

Typical junction capacitance

0.57

4.0 V, 1 MHz

RșJC

TO-220AB

ITO-220AB

3.0

4.2

Typical Thermal Resistance

ć/W

NOTES:1.300us pulse width,2% duty cycle.

and applied reverse voltage of 4.0V DC.

2.Measured at 1.0 MH^Z

. Ther m a l resi sta nce fro m j un ct io n to c ase

w.bytesonic.com

http://ww

Version 1.2

2017/11/17

12 3

中文翻译

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