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MBR20150 PDF预览

MBR20150

更新时间: 2024-11-06 07:08:11
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ASEMI 高压
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3页 165K
描述
Dual High-Voltage Schottky Rectifiers

MBR20150 数据手册

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MBR20150  
Dual High-Voltage Schottky Rectifiers  
REV:1.01  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM=150V  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
IF(AV)= 20A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
● Low Voltage Continued Circuit and Protection Circuit.  
Polarity  
■ MBR20150 Schottky diode,in the manufacture uses the main  
process technology includes: Silicon epitaxial substrate, P+  
loop technology,The potential metal and the silicon alloy  
technology, the device uses the two chip, the common cathode,  
the plastic half package structure.  
Absolute Maximum Ratings  
Item  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
Symbol  
VRRM  
VDC  
MBR20150  
150  
Unit  
150  
Average Rectified Forward Current TC=150℃  
Device  
Whole  
20  
10  
IFAV  
A
A
unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Electricity Character  
Representat  
ive  
Test Condition  
MBR20150  
Unit  
Item  
Minimum  
120  
1
uA  
mA  
V
TJ =25℃  
TJ =125℃  
VF TJ =25℃  
IR  
VR=VRRM  
IF=10A  
0.9  
Page1  

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