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MBR130T1 PDF预览

MBR130T1

更新时间: 2024-11-24 22:39:39
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管光电二极管
页数 文件大小 规格书
4页 44K
描述
SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS

MBR130T1 技术参数

是否无铅: 含铅生命周期:End Of Life
包装说明:PLASTIC, CASE 425-04, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:5.56Is Samacsys:N
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.35 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:5.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

MBR130T1 数据手册

 浏览型号MBR130T1的Datasheet PDF文件第2页浏览型号MBR130T1的Datasheet PDF文件第3页浏览型号MBR130T1的Datasheet PDF文件第4页 
MBR130T1, MBR130T3  
Surface Mount  
Schottky Power Rectifier  
Plastic SOD–123 Package  
. . . using the Schottky Barrier principle with a large area  
metal–to–silicon power diode. Ideally suited for low voltage, high  
frequency rectification or as free wheeling and polarity protection  
diodes in surface mount applications where compact size and weight  
are critical to the system. This package also provides an easy to work  
with alternative to leadless 34 package style. These state–of–the–art  
devices have the following features:  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
1.0 AMPERES  
30 VOLTS  
Guardring for Stress Protection  
Low Forward Voltage  
125°C Operating Junction Temperature  
Epoxy Meets UL94, VO at 1/8″  
Package Designed for Optimal Automated Board Assembly  
ESD Ratings: Machine Model, C;  
ESD Ratings: Human Body Model, 3  
Mechanical Characteristics  
SOD–123  
CASE 425  
STYLE 1  
Reel Options: MBR130T1 = 3,000 per 7reel/8 mm tape  
Reel Options: MBR130T3 = 10,000 per 13reel/8 mm tape  
Device Marking: S3  
Polarity Designator: Cathode Band  
Weight: 11.7 mg (approximately)  
Case: Epoxy, Molded  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
DEVICE MARKING  
S3  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
S3 = Device Code  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
30  
V
Device  
Package  
SOD–123  
SOD–123  
Shipping  
RRM  
V
RWM  
MBR130T1  
MBR130T3  
3000/Tape & Reel  
V
R
Average Rectified Forward Current  
I
A
A
F(AV)  
10,000/Tape & Reel  
(Rated V ) T = 65°C  
1.0  
5.5  
R
L
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions, Halfwave, Single  
Phase, 60 Hz)  
I
FSM  
Storage Temperature Range  
T
–65 to +125  
–65 to +125  
1000  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 1  
MBR130T1/D  

MBR130T1 替代型号

型号 品牌 替代类型 描述 数据表
MBR130T3G ONSEMI

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MBR130T1G ONSEMI

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MBR130T3 ONSEMI

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SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS

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