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MBR140HW-G-T3 PDF预览

MBR140HW-G-T3

更新时间: 2024-11-21 14:34:31
品牌 Logo 应用领域
SENSITRON 光电二极管
页数 文件大小 规格书
4页 205K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2

MBR140HW-G-T3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.45 W认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR140HW-G-T3 数据手册

 浏览型号MBR140HW-G-T3的Datasheet PDF文件第2页浏览型号MBR140HW-G-T3的Datasheet PDF文件第3页浏览型号MBR140HW-G-T3的Datasheet PDF文件第4页 
MBR120HW-G/ MBR140HW-G  
SENSITRON  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
SEMICONDUCTOR  
Green Products  
Data Sheet 3344, Rev. —  
Features  
!
Low Turn-on Voltage  
!
!
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
Designed for Surface Mount Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
A
B
SOD-123  
Dim Min Max Min Max  
A
B
C
D
E
G
H
J
3.6  
2.5  
1.4  
0.5  
3.9 0.14 0.154  
2.8 0.098 0.110  
1.8 0.055 0.070  
0.7 0.020 0.028  
!
!
C
D
ꢀ ꢀ ꢀ  
Green Products in Compliance with the RoHS Directive  
0.2  
0.008  
E
0.4  
0.016  
0.95 1.35 0.037 0.053  
0.12 0.005  
In mm In inch  
Mechanical Data  
H
!
!
Case: SOD-123, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.01 grams (approx.)  
Marking: MBR120HW-G G3  
MBR140HW-G G5  
G
J
!
!
!
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
MBR120HW-G  
MBR140HW -G  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
40  
V
A
Forward Continuous Current (Note 1)  
IF  
1.0  
25  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
A
Power Dissipation (Note 1)  
Pd  
450  
222  
mW  
°C/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +125  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
MBR120HW-G  
MBR140HW-G  
Unit  
Forward Voltage Drop  
@IF = 1.0A  
VFM  
IRM  
Cj  
0.45  
400  
0.55  
500  
V
Peak Reverse Leakage Current @ DC Blocking Voltage  
Typical Junction Capacitance (VR = 4V DC, f = 1MHz)  
µA  
pF  
50  
Note: 1. Valid provided that terminals are kept at ambient temperature.  
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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