Datasheet > MBR1045

MBR1045

更新时间： 2024-11-01 12:49:55

品牌	Logo	应用领域
GSG		肖特基二极管局域网
页数	文件大小	规格书
1页	75K
描述
Chips for Schottky Diodes

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MBR1045 数据手册

MBR 1045

Chips for Schottky Diodes

Chip Specification

General Description:

Schottky Diode chips with Mo-barrier for switch mode power

rectifiers with the following features:

* Guard-ring for stress protection

* Extremely low forward voltage

* 125 ℃ operation junction temperature

* reverse avalanche behavior

Mechanical Data:

MBR1045 passivated Silicon Chip

Demension(mil)

Thickness:

105x105

350 +- 20 µm

Metallization:

Top ( Anode ) :

Al Ag

Bottom ( Cathode) : TiNiAg

Forward Current(A)

10A

Reverse Voltage (V): >45 V

Type

Chip

VF(V)@25 C VF(V)@125 C I^RM@V^RMM

size(mil)

at If=10A

at 25 C

MBR1045

105x105 620mV

540mV

0,6mA

* expected value for recommended assembling with both side soldering

Typical devise MBR1045

Note: Other voltages & Top Metal AL are available

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MBR1045C_15	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
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