Datasheet > MBR1045BCT

MBR1045BCT

更新时间： 2024-02-02 23:02:56

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
3页	957K
描述
10A Surface Mount High Power Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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MBR1045BCT 数据手册

MBR1040BCT THRU MBR10200BCT

10A Surface Mount High Power Schottky Barrier Rectifiers

■ Features

■ Outline

D²PAK(TO-263)

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

0.411(10.45)

0.380(9.65)

0.055(1.40)

0.190(4.83)

0.245(6.22)

•Silicon epitaxial planar chip, metal silicon junction.

0.031(0.80)

0.160(4.06)

MIN

•

Suffix "H" indicates Halogen-free part, ex.MBR1040BCTH. Lead-

f•ree parts meet environmental standards of

MIL-STD-19500 /228

0.055(1.40)

0.045(1.14)

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-263 / D²PAK

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 1.70 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

125

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

@5A, T_A= 25^OC

V_F(V)

forward voltage

@5A, T_A= 125^OC

V_F(V)

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

MBR1040BCT

MBR1045BCT

MBR1060BCT

MBR1065BCT

MBR1040BCT

MBR1045BCT

MBR1060BCT

MBR1065BCT

31.5

0.70

0.79

0.57

0.70

-55 ~ +150

-55 ~ +175

45.5

MBR10100BCT MBR10100BCT

MBR10150BCT MBR10150BCT

MBR10200BCT MBR10200BCT

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MBR1045BCT相关器件

型号	品牌	获取价格	描述	数据表
MBR1045BF	JSMC	获取价格	SCHOTTKY BARRIER DIODE
MBR1045BFR	JSMC	获取价格	SCHOTTKY BARRIER DIODE
MBR1045C	UTC	获取价格	10A SCHOTTKY BARRIER
MBR1045C	RECTRON	获取价格	Reverse Voltage Vr : 45 V;Forward Current Io : 10.0 A;Max Surge Current : 100 A;Forward Vo
MBR1045C_15	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR1045CA	THINKISEMI	获取价格	10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
MBR1045CD	DYELEC	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR1045CD	SENO	获取价格	10.0A SCHOTTKY BARRIER DIODE
MBR1045CD	YANGJIE	获取价格	TO-252
MBR1045CD	ANBON	获取价格	TO-252AB

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