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MBR1045 PDF预览

MBR1045

更新时间: 2024-01-06 23:35:15
品牌 Logo 应用领域
SIRECTIFIER 二极管局域网
页数 文件大小 规格书
2页 81K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR1045 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.14Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.47 V
JEDEC-95代码:TO-277BJESD-30 代码:R-PDSO-F3
最大非重复峰值正向电流:275 A元件数量:1
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:45 V
最大反向电流:250 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR1045 数据手册

 浏览型号MBR1045的Datasheet PDF文件第2页 
MBR1030 thru MBR1045  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dimensions TO-220AC  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
12.70 14.73  
14.23 16.51  
9.66 10.66  
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
MBR1030  
MBR1035  
MBR1040  
MBR1045  
30  
21  
30  
35  
40  
45  
35  
24.5  
28  
40  
45  
31.5  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
dv/dt  
VF  
Maximum Average Forward Rectified Current @TC=125oC  
10  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
150  
Voltage Rate Of Change (Rated VR)  
10000  
V/us  
V
IF=20A @TJ=25oC  
Maximum Forward  
0.84  
0.57  
IF=20A @TJ=125oC  
Voltage  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
0.1  
15  
IR  
mA  
@TJ=125oC  
2.5  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 1)  
Typical Junction Capacitance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
400  
-55 to +150  
-55 to +175  
TJ  
TSTG  
oC  
NOTES: 1. Thermal Resistance Junction To Case.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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