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MBR1010CT PDF预览

MBR1010CT

更新时间: 2024-01-27 20:31:01
品牌 Logo 应用领域
美台 - DIODES 高压
页数 文件大小 规格书
2页 65K
描述
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

MBR1010CT 数据手册

 浏览型号MBR1010CT的Datasheet PDF文件第2页 
SPICE MODEL: MBR10100CT  
MBR1070CT - MBR10100CT  
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
·
Schottky Barrier Chip  
·
Guard Ring Die Construction for  
Transient Protection  
TO-220AB  
L
·
·
·
·
Low Power Loss, High Efficiency  
Dim  
A
B
C
D
E
Min  
14.48  
10.00  
2.54  
5.90  
2.80  
12.70  
2.40  
0.69  
3.54  
4.07  
1.15  
0.30  
2.04  
Max  
15.75  
10.40  
3.43  
6.40  
3.93  
14.27  
2.70  
0.93  
3.78  
4.82  
1.39  
0.50  
2.79  
B
M
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
C
D
E
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
K
A
·
Lead Free Finish, RoHS Compliant (Note 3)  
1
2
3
G
H
J
Mechanical Data  
·
·
Case: TO-220AB  
G
J
N
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
L
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Polarity: As Marked on Body  
H
H
P
M
N
P
Pin 1  
Pin 2  
Pin 3  
Terminals: Finish – Bright Tin. Solderable per  
MIL-STD-202, Method 208  
Case  
·
·
·
Mounting Position: Any  
Marking: Type Number  
Weight: 2.24 grams (approx)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
1070CT  
MBR  
1080CT  
MBR  
1090CT  
MBR  
10100CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
49  
80  
56  
90  
63  
100  
70  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
(Note 1)  
10  
@ TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
120  
A
Forward Voltage Drop  
@ IF = 5.0A, TC  
@ IF = 5.0A, TC  
@ IF = 10A, TC  
@ IF = 10A, TC  
=
=
=
=
125°C  
25°C  
125°C  
25°C  
0.75  
0.85  
0.85  
0.95  
VFM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC  
=
25°C  
0.1  
50  
IRM  
mA  
@ TC = 125°C  
Cj  
Typical Junction Capacitance (Note 2)  
300  
3.0  
pF  
K/W  
V/ms  
°C  
RqJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Voltage Rate of Change  
dV/dt  
Tj, TSTG  
10,000  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS30028 Rev. 2 - 2  
1 of 2  
MBR1070CT-MBR10100CT  
www.diodes.com  
ã Diodes Incorporated  

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